School of Mechanical Engineering
Purdue University
Brief Project Description:
Parallelization of a molecular dynamics method for computing the
thermal conductivity of materials such as Silicon.
A portable parallel program developed for molecular dynamics
simulations is developed. This program computes the thermal
conductivity of bulk silicon. In particular, the effect of the
computational domain size (number of atoms) on the predicted
accuracy is investigated. The thermal conductivity of thin film
silicon at room temperature is explored. This program shows excellent
scalability on a variety of architectures including IBM's BlueGene,
IBM's Power4 P655+, and Linux clusters. A task that would have taken
30 days on a single processor can now be completed in 2.5 and 5 hours
on 1024 Power4+ processors and 1728 BlueGene's PowerPC processors
respectively, using our parallel molecular dynamics algorithm. Results
show that, as the thickness increases up to 300 nm, the thermal conductivity
approaches the bulk thermal conductivity. This work permits us to confidently
apply molecular dynamics to the simulation of thermal conductivity of both
bulk materials and thin films.
The computed thermal conductivity follows: Predicted thermal conductivity of
bulk silicon using Green-Kubo method as a function of number of atoms. The
experimental value is 148 W/mK. run.
The performance of this program on various national centers and Purdue computers is shown below for these computers. The average total time in seconds for one time step in the MD computation is plotted as a function of the number of processors, on a log-log scale.

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